skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate

Abstract

High quality HfO{sub 2} dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO{sub 2}/graphene/4H-SiC heterojunctions have good thermal stability up to 650 deg. C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO{sub 2} and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.

Authors:
; ; ; ;  [1]; ; ; ;  [2]
  1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)
  2. Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)
Publication Date:
OSTI Identifier:
21347277
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 96; Journal Issue: 7; Other Information: DOI: 10.1063/1.3327834; (c) 2010 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DIELECTRIC MATERIALS; ELECTRONIC EQUIPMENT; EPITAXY; HAFNIUM OXIDES; HEAT TREATMENTS; HETEROJUNCTIONS; LAYERS; PHOTOEMISSION; PLASMA; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SPECTRAL SHIFT; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRON SPECTROSCOPY; EMISSION; EQUIPMENT; FILMS; HAFNIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; REFRACTORY METAL COMPOUNDS; SECONDARY EMISSION; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Chen, Q, Huang, H, Chen, W, Wee, A T. S., Feng, Y P, Chai, J W, Zhang, Z, Pan, J S, and Wang, S J. In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate. United States: N. p., 2010. Web. doi:10.1063/1.3327834.
Chen, Q, Huang, H, Chen, W, Wee, A T. S., Feng, Y P, Chai, J W, Zhang, Z, Pan, J S, & Wang, S J. In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate. United States. https://doi.org/10.1063/1.3327834
Chen, Q, Huang, H, Chen, W, Wee, A T. S., Feng, Y P, Chai, J W, Zhang, Z, Pan, J S, and Wang, S J. Mon . "In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate". United States. https://doi.org/10.1063/1.3327834.
@article{osti_21347277,
title = {In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate},
author = {Chen, Q and Huang, H and Chen, W and Wee, A T. S. and Feng, Y P and Chai, J W and Zhang, Z and Pan, J S and Wang, S J},
abstractNote = {High quality HfO{sub 2} dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO{sub 2}/graphene/4H-SiC heterojunctions have good thermal stability up to 650 deg. C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO{sub 2} and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.},
doi = {10.1063/1.3327834},
url = {https://www.osti.gov/biblio/21347277}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 96,
place = {United States},
year = {2010},
month = {2}
}