Strong localization effect in magnetic two-dimensional hole systems

Journal Article · Mon Jan 11 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3291673· OSTI ID:21347239

Wurstbauer, U ^[1]; Knott, S; Zolotaryov, A; Hansen, W ^[2]; Schuh, D ^[1]; Wegscheider, W ^[1]

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1. Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg (Germany)
2. Institute of Applied Physics, University of Hamburg, 20355 Hamburg (Germany)

We report an extensive study of the magnetotransport properties of magnetically doped two-dimensional hole systems. Inverted manganese modulation doped InAs quantum wells with localized manganese ions providing a magnetic moment of S=5/2 were grown by molecular beam epitaxy. Strong localization effect found in low-field magnetotransport measurements on these structures can either be modified by the manganese doping density or by tuning the two-dimensional hole density p via field effect. The data reveal that the ratio between p and manganese ions inside or in close vicinity to the channel enlarges the strong localization effect. Moreover, asymmetric broadening of the doping layer due to manganese segregation is significantly influenced by strain in the heterostructure.

• OSTI ID: 21347239
• Journal Information: Applied Physics Letters, Vol. 96, Issue 2; Other Information: DOI: 10.1063/1.3291673; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
ASYMMETRY
CRYSTAL GROWTH
DOPED MATERIALS
HOLES
INDIUM ARSENIDES
LAYERS
MAGNETIC MOMENTS
MANGANESE
MANGANESE IONS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEGREGATION
SEMICONDUCTOR MATERIALS
TWO-DIMENSIONAL CALCULATIONS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTAL GROWTH METHODS
ELEMENTS
EPITAXY
INDIUM COMPOUNDS
IONS
MATERIALS
METALS
NANOSTRUCTURES
PNICTIDES
TRANSITION ELEMENTS