Contact-Free Germanium Ionization and Phonon Detectors

Journal Article · Wed Dec 16 00:00:00 EST 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3292424· OSTI ID:21325829

Mirabolfathi, N; Yen, J J; Daal, M; Serfass, B; Sadoulet, B; Seitz, D N; Sundqvist, K M ^[1]; Brink, P L; Cabrera, B; Tomada, A ^[2]

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1. Department of Physics, University of California, Berkeley, CA 94720 (United States)
2. Department of Physics, Stanford University, Stanford, CA 94305 (United States)

A new method to study the origin of the dead-layer in ionization-phonon detectors was developed wherein the ionization is measured via a 25 micron gap between the collection electrodes and germanium absorber. Phonon signals are measured with small tungsten thermometers (Tc{approx}90 mK) varnished to the Ge substrates. The Ge samples were studied using collimated {sup 241}Am sources. With this geometry, different contributions to the 'dead-layer' effect can be studied independently: Carrier back diffusion, trapping on surface states, Schottky barrier lowering, etc.

• OSTI ID: 21325829
• Journal Information: AIP Conference Proceedings, Vol. 1185, Issue 1; Conference: LTD13: 13. international workshop on low temperature detectors, Stanford, CA (United States), 20-24 Jul 2009; Other Information: DOI: 10.1063/1.3292424; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMERICIUM 241
CRYOGENICS
DIFFUSION
ELECTRODES
GERMANIUM
IONIZATION
LAYERS
PHONONS
RADIATION DETECTION
RADIATION DETECTORS
SIGNALS
SQUID DEVICES
SUBSTRATES
SURFACES
THERMOMETERS
TRAPPING
TUNGSTEN