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Title: Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell

Abstract

The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (D{sub it}), the resistivity of p-type silicon substrates ({rho}) and then work function of transparent conductive oxide ({phi}{sub TCO}) on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET) software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/c-Si and/or the c-Si/back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell performance and the dependence of cell performance on {rho} and {phi}{sub TCO} were investigated in detail. Eventually, suggestive design parameters for HIT solar cell fabrication are proposed. (author)

Authors:
; ; ; ; ;  [1];  [2];  [1]
  1. School of Information and Communication Engineering, Sungkyunkwan University (Korea)
  2. Department of Physics, Madras Christian College, Chennai 600059 (India)
Publication Date:
OSTI Identifier:
21318378
Resource Type:
Journal Article
Journal Name:
Solar Energy
Additional Journal Information:
Journal Volume: 84; Journal Issue: 5; Other Information: Elsevier Ltd. All rights reserved; Journal ID: ISSN 0038-092X
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SOLAR CELLS; OXIDES; SILICON; HETEROJUNCTIONS; THIN FILMS; ELECTRIC CONDUCTIVITY; SIMULATION; PERFORMANCE; SURFACES; DEFECTS; INTERFACES; LAYERS; SUBSTRATES; COMPUTER CODES; WORK FUNCTIONS; DESIGN; FABRICATION; PARAMETRIC ANALYSIS; Band bending

Citation Formats

Dao, Vinh Ai, Heo, Jongkyu, Choi, Hyungwook, Kim, Yongkuk, Park, Seungman, Jung, Sungwook, Lakshminarayan, Nariangadu, Yi, Junsin, and Department of Energy Science, Sungkyungkwan University, Suwon. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell. United States: N. p., 2010. Web. doi:10.1016/J.SOLENER.2010.01.029.
Dao, Vinh Ai, Heo, Jongkyu, Choi, Hyungwook, Kim, Yongkuk, Park, Seungman, Jung, Sungwook, Lakshminarayan, Nariangadu, Yi, Junsin, & Department of Energy Science, Sungkyungkwan University, Suwon. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell. United States. https://doi.org/10.1016/J.SOLENER.2010.01.029
Dao, Vinh Ai, Heo, Jongkyu, Choi, Hyungwook, Kim, Yongkuk, Park, Seungman, Jung, Sungwook, Lakshminarayan, Nariangadu, Yi, Junsin, and Department of Energy Science, Sungkyungkwan University, Suwon. Sat . "Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell". United States. https://doi.org/10.1016/J.SOLENER.2010.01.029.
@article{osti_21318378,
title = {Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell},
author = {Dao, Vinh Ai and Heo, Jongkyu and Choi, Hyungwook and Kim, Yongkuk and Park, Seungman and Jung, Sungwook and Lakshminarayan, Nariangadu and Yi, Junsin and Department of Energy Science, Sungkyungkwan University, Suwon},
abstractNote = {The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (D{sub it}), the resistivity of p-type silicon substrates ({rho}) and then work function of transparent conductive oxide ({phi}{sub TCO}) on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET) software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/c-Si and/or the c-Si/back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell performance and the dependence of cell performance on {rho} and {phi}{sub TCO} were investigated in detail. Eventually, suggestive design parameters for HIT solar cell fabrication are proposed. (author)},
doi = {10.1016/J.SOLENER.2010.01.029},
url = {https://www.osti.gov/biblio/21318378}, journal = {Solar Energy},
issn = {0038-092X},
number = 5,
volume = 84,
place = {United States},
year = {2010},
month = {5}
}