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Title: Superlattice Photocathode Damage Analysis

Abstract

Jefferson Lab uses 100 kV DC high voltage photoguns with high polarization strained superlattice GaAs photocathodes to achieve electron beam polarization over 80%. The photocathode is subjected to back-bombardment from ionized residual gasses during operation. We present surface analyses using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) to characterize photocathode damage.

Authors:
;  [1]
  1. Center for Injectors and Sources, Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States)
Publication Date:
OSTI Identifier:
21316852
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1149; Journal Issue: 1; Conference: 18. international spin physics symposium, Charlottesville, VA (United States), 6-11 Oct 2008; Other Information: DOI: 10.1063/1.3215588; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CEBAF ACCELERATOR; ELECTRIC POTENTIAL; ELECTRON BEAMS; GALLIUM ARSENIDES; ION MICROPROBE ANALYSIS; IONS; IRRADIATION; MASS SPECTROSCOPY; OPERATION; PHOTOCATHODES; PHYSICAL RADIATION EFFECTS; POLARIZATION; SUPERLATTICES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Stutzman, Marcy L, and Grames, Joseph. Superlattice Photocathode Damage Analysis. United States: N. p., 2009. Web. doi:10.1063/1.3215588.
Stutzman, Marcy L, & Grames, Joseph. Superlattice Photocathode Damage Analysis. United States. https://doi.org/10.1063/1.3215588
Stutzman, Marcy L, and Grames, Joseph. Tue . "Superlattice Photocathode Damage Analysis". United States. https://doi.org/10.1063/1.3215588.
@article{osti_21316852,
title = {Superlattice Photocathode Damage Analysis},
author = {Stutzman, Marcy L and Grames, Joseph},
abstractNote = {Jefferson Lab uses 100 kV DC high voltage photoguns with high polarization strained superlattice GaAs photocathodes to achieve electron beam polarization over 80%. The photocathode is subjected to back-bombardment from ionized residual gasses during operation. We present surface analyses using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) to characterize photocathode damage.},
doi = {10.1063/1.3215588},
url = {https://www.osti.gov/biblio/21316852}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1149,
place = {United States},
year = {2009},
month = {8}
}