Amorphous silicon as electron transport layer for colloidal semiconductor nanocrystals light emitting diode

Journal Article · Mon Dec 07 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3269931· OSTI ID:21294502

Tao, Song; Xiaojuan, Shen; Baoquan, Sun ^[1]; Fute, Zhang ^[1]; Xiaohong, Zhang ^[2]; Xiulin, Zhu ^[3]

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1. Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Functional Nano and Soft Materials Laboratory (FUNSOM), Soochow University, 199 Ren'ai Road, Suzhou 215123 (China)
2. Nano-Organic Photoelectronic Laboratory and Laboratory of Organic Optoelectronic Functional Materials and Molecular Engineering, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)
3. Key Laboratory of Organic Synthesis of Jiangsu Province, School of Chemistry and Chemical Engineering, Soochow University, Suzhou 215123 (China)

We demonstrate the fabrication of light-emitting diodes (LEDs) made from all-inorganic colloidal semiconducting nanocrystals (NCs). The diode utilizes a sandwich structure formed by placing CdSe/CdS NCs between two layers of Si and Ag{sub x}O, which act as electron- and hole-transporting materials, respectively. The photoluminescence properties of NCs are rendered less dependent upon surface chemistry and chemical environment by growing a thick CdS shell. It also enhances stability of the NCs during the process of magnetron sputtering for silicon deposition. The resulting LED device exhibits a low turn-on voltage of 2.5 V and the maximum external quantum efficiency of nearly 0.08%.

• OSTI ID: 21294502
• Journal Information: Applied Physics Letters, Vol. 95, Issue 23; Other Information: DOI: 10.1063/1.3269931; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CADMIUM SELENIDES
CADMIUM SULFIDES
CHARGED-PARTICLE TRANSPORT
DEPOSITION
ELECTRIC POTENTIAL
ELECTRONS
HOLE MOBILITY
LAYERS
LIGHT EMITTING DIODES
NANOSTRUCTURES
PHOTOLUMINESCENCE
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING