Defect kinetics and dopant activation in submicrosecond laser thermal processes

Journal Article · Mon Dec 07 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3268472· OSTI ID:21294497

Huet, K; Venturini, J; Besaucele, H ^[1]; Fisicaro, G ^[2]; La Magna, A ^[3]

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1. Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers (France)
2. Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia, 64, I-95123 Catania (Italy)
3. CNR-IMM Sezione Catania, Stradale Primosole 50, I-95121 Catania (Italy)

Defect evolution in ion implanted c-Si at the submicrosecond time scales during a laser thermal annealing process is investigated by means of kinetic simulations. Nonmelting, melting, and partial melting regimes are simulated. Our modeling considers irradiation, heat diffusion, and phase transition together with defect diffusion, annihilation, and clustering. The reduction in the implantation damage and its reorganization in defect aggregates are studied as a function of the process conditions. The approach is applied to double implanted Si and compared to experimental data, indicating a relationship between damage reduction and dopant activation.

• OSTI ID: 21294497
• Journal Information: Applied Physics Letters, Vol. 95, Issue 23; Other Information: DOI: 10.1063/1.3268472; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANNIHILATION
ION IMPLANTATION
LASERS
MELTING
SEMICONDUCTOR MATERIALS
SILICON
SIMULATION
THERMAL DIFFUSION