Strain-induced microstructural evolution in epitaxial Fe/MgO layers grown on In{sub x}Ga{sub 1-x}As(001) substrates

Journal Article · Mon Oct 19 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3231075· OSTI ID:21294375

Kim, Kyung-ho; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk-hee ^[1]; Kim, Gyeung-Ho ^[2]

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1. Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
2. Center for Nano-Materials Analysis, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

Epitaxial Fe/MgO layers have been grown on In{sub x}Ga{sub 1-x}As substrates to examine the epitaxial relationship and the morphological variation with respect to indium content, x and the growth temperature of MgO interlayer. The in-plane epitaxial relationship of Fe[010]//MgO[110]//In{sub x}Ga{sub 1-x}As[110] is found in the structures of all x values for 4 nm thick MgO layers grown at room temperature. Epitaxial MgO interlayers grow in two-dimensional layer regardless of x while the morphology of subsequent Fe changes from two-dimensional layer to three-dimensional islands with the increase of x. Furthermore, the average size of Fe islands becomes smaller at higher x value due to enhanced underlying strain. The elevated growth temperature of MgO has led to partial strain relaxation, resulting in the suppression of three-dimensional Fe island formation.

• OSTI ID: 21294375
• Journal Information: Applied Physics Letters, Vol. 95, Issue 16; Other Information: DOI: 10.1063/1.3231075; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
EPITAXY
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
INDIUM
INDIUM ARSENIDES
IRON
LAYERS
MAGNESIUM OXIDES
MICROSTRUCTURE
MOLECULAR STRUCTURE
MORPHOLOGY
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K