Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x}
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Department of Electrical Engineering, University of Yamanashi, Takeda 4-3-11, Kofu 400-8511 (Japan)
We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitatively explained by an anticrossing interaction between the highly localized oxygen defect states and the extended states of the conduction band.
- OSTI ID:
- 21294361
- Journal Information:
- Applied Physics Letters, Vol. 95, Issue 15; Other Information: DOI: 10.1063/1.3242026; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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