Characterization of diamond ultraviolet detectors fabricated with high-quality single-crystalline chemical vapor deposition films
- Division of Electrical, Electronic, and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)
We have fabricated high-performance ultraviolet (UV) detectors with high-quality undoped and B-doped homoepitaxial diamond layers which were sequentially grown on a high-pressure/high-temperature-synthesized (HPHT) type-Ib (100) substrate by means of a high-power microwave-plasma chemical vapor deposition method. The detector performance measured had large quantum efficiencies due to an effective built-in current amplification function, fast temporal responses, and high UV/visible sensing ratios although the HPHT substrate used had considerable amounts of various defects inducing visible light absorptions and slow detector responses. The usefulness of the bilayer detector structure employed is discussed.
- OSTI ID:
- 21294139
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 22; Other Information: DOI: 10.1063/1.3143621; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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