Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

Journal Article · Mon Jun 01 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3139864· OSTI ID:21294133

Bharadwaja, S S. N. ^[1]; Venkatasubramanian, C; Fieldhouse, N; Ashok, S; Horn, M W ^[2]; Jackson, T N ^[3]

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1. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
2. Department of Engineering Sciences, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
3. Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

Low temperature charge transport in vanadium oxide (VO{sub x}) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity {rho}(T) of the VO{sub x} thin films is dominated by a Efros-Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.

• OSTI ID: 21294133
• Journal Information: Applied Physics Letters, Vol. 94, Issue 22; Other Information: DOI: 10.1063/1.3139864; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CHARGE TRANSPORT
DEPOSITION
ELECTRICAL PROPERTIES
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
VANADIUM OXIDES