The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

Journal Article · Mon May 18 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3141509· OSTI ID:21294083

Boulle, A; Aube, J ^[1]; Galben-Sandulache, I G; Chaussende, D ^[2]

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1. Science des Procedes Ceramiques et de Traitements de Surface CNRS UMR 6638, ENSCI, 47 avenue Albert Thomas, 87065 Limoges Cedex (France)
2. Laboratoire des Materiaux et du Genie Physique CNRS UMR 5628, Grenoble INP, Minatec, 3 parvis Louis Neel, BP 257, 38016 Grenoble Cedex 01 (France)

The 3C-6H polytypic transition in SiC single crystals is studied by means of diffuse x-ray scattering. Based on numerical simulations of the diffuse scattering intensity distribution we unambiguously prove that the 3C-6H transition in SiC occurs through the glide of partial dislocations and not by the ''layer displacement'' mechanism (i.e., local diffusional rearrangement of the Si and C atoms). The technique is extremely sensitive and can be used as a nondestructive mean to obtain statistically relevant values of the transition level down to {approx}0.05%.

• OSTI ID: 21294083
• Journal Information: Applied Physics Letters, Vol. 94, Issue 20; Other Information: DOI: 10.1063/1.3141509; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPUTERIZED SIMULATION
DIFFUSE SCATTERING
DISLOCATIONS
MONOCRYSTALS
PHASE TRANSFORMATIONS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
STACKING FAULTS
X-RAY DIFFRACTION