Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} electrodes fabricated by molecular beam epitaxy

Journal Article · Mon Apr 20 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3116717· OSTI ID:21294048

Tezuka, N; Ikeda, N; Mitsuhashi, F; Sugimoto, S ^[1]

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1. Department of Materials Science, Graduate School of Engineering, Tohoku University, Aobayama 6-6-02, Sendai 980-8579 (Japan)

The authors have developed a magnetic tunnel junction of Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.

• OSTI ID: 21294048
• Journal Information: Applied Physics Letters, Vol. 94, Issue 16; Other Information: DOI: 10.1063/1.3116717; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COBALT ALLOYS
CRYSTAL GROWTH
DEPOSITION
ELECTRODES
FERROMAGNETIC MATERIALS
HEUSLER ALLOYS
IRON ALLOYS
LAYERS
MAGNESIUM OXIDES
MAGNETORESISTANCE
MOLECULAR BEAM EPITAXY
ROUGHNESS
SILICON ALLOYS
SUPERCONDUCTING JUNCTIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT