A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
Abstract
A low-temperature method, supercritical CO{sub 2} (SCCO{sub 2}) fluid technology, is employed to improve the device properties of ZnO TFT at 150 deg. C. In this work, the undoped ZnO films were deposited by sputter at room temperature and treated by SCCO{sub 2} fluid which is mixed with 5 ml pure H{sub 2}O. After SCCO{sub 2} treatment, the on/off current ratios and threshold voltage of the device were improved significantly. From x-ray photoelectron spectroscopy analyses, the enhancements were attributed to the stronger Zn-O bonds, the hydrogen-related donors, and the reduction in dangling bonds at the grain boundary by OH passivation.
- Authors:
-
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
- Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
- Department of Photonics and Display Institute, National Chiao Tung University, Hsin-Chu 300, Taiwan (China)
- Department of Physics, Nanjing University, Nanjing 210093 (China) and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
- Publication Date:
- OSTI Identifier:
- 21294047
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 94; Journal Issue: 16; Other Information: DOI: 10.1063/1.3124658; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CHEMICAL BONDS; DEPOSITION; ELECTRIC POTENTIAL; GRAIN BOUNDARIES; HYDROGEN; PASSIVATION; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSISTORS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
Citation Formats
Minchen, Chen, Shengyao, Huang, Shihching, Chen, Tingchang, Chang, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, Kuanchang, Chang, Hungwei, Li, Jin, Lu, Department of Physics, Nanjing University, Nanjing 210093, and Yi, Shi. A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid. United States: N. p., 2009.
Web. doi:10.1063/1.3124658.
Minchen, Chen, Shengyao, Huang, Shihching, Chen, Tingchang, Chang, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, Kuanchang, Chang, Hungwei, Li, Jin, Lu, Department of Physics, Nanjing University, Nanjing 210093, & Yi, Shi. A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid. United States. https://doi.org/10.1063/1.3124658
Minchen, Chen, Shengyao, Huang, Shihching, Chen, Tingchang, Chang, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, Kuanchang, Chang, Hungwei, Li, Jin, Lu, Department of Physics, Nanjing University, Nanjing 210093, and Yi, Shi. 2009.
"A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid". United States. https://doi.org/10.1063/1.3124658.
@article{osti_21294047,
title = {A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid},
author = {Minchen, Chen and Shengyao, Huang and Shihching, Chen and Tingchang, Chang and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan and Kuanchang, Chang and Hungwei, Li and Jin, Lu and Department of Physics, Nanjing University, Nanjing 210093 and Yi, Shi},
abstractNote = {A low-temperature method, supercritical CO{sub 2} (SCCO{sub 2}) fluid technology, is employed to improve the device properties of ZnO TFT at 150 deg. C. In this work, the undoped ZnO films were deposited by sputter at room temperature and treated by SCCO{sub 2} fluid which is mixed with 5 ml pure H{sub 2}O. After SCCO{sub 2} treatment, the on/off current ratios and threshold voltage of the device were improved significantly. From x-ray photoelectron spectroscopy analyses, the enhancements were attributed to the stronger Zn-O bonds, the hydrogen-related donors, and the reduction in dangling bonds at the grain boundary by OH passivation.},
doi = {10.1063/1.3124658},
url = {https://www.osti.gov/biblio/21294047},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 94,
place = {United States},
year = {Mon Apr 20 00:00:00 EDT 2009},
month = {Mon Apr 20 00:00:00 EDT 2009}
}
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