Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices

Journal Article · Mon Apr 20 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3120551· OSTI ID:21294044

Malis, O; Edmunds, C ^[1]; Manfra, M J; Sivco, D L ^[2]

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1. Department of Physics, Binghamton University, Binghamton, New York 13902 (United States)
2. Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974 (United States)

Strong near-infrared intersubband absorption is observed directly at room temperature in silicon-doped lattice-matched InAlN/GaN superlattices grown by molecular-beam epitaxy on GaN templates grown by hydride vapor-phase epitaxy. X-ray diffraction characterization of the heterostructures indicates excellent layer thickness uniformity and low interface roughness. For 2-4.5 nm quantum wells, the intersubband transition energies span the technologically relevant range between 2.3 and 2.9 {mu}m. The experimental results are in good agreement with calculations of the transition energies using a conduction band offset of 1 eV and spontaneous polarization of 3 MV/cm.

• OSTI ID: 21294044
• Journal Information: Applied Physics Letters, Vol. 94, Issue 16; Other Information: DOI: 10.1063/1.3120551; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH
DOPED MATERIALS
GALLIUM NITRIDES
HYDRIDES
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SUPERLATTICES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION