Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques
- School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India)
- Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India)
- Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland)
- Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)
Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.
- OSTI ID:
- 21289548
- Journal Information:
- AIP Conference Proceedings, Vol. 1099, Issue 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3120049; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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