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Title: Ion Beam Analysis of the Thermal Stability of Hydrogenated Diamond-Like Carbon Thin Films on Si Substrate

Abstract

Unbalanced magnetron sputtering deposition of C-H films has been performed with various levels of negative substrate bias and with a fixed flow rate of hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The effect of hydrogenation on the final concentration of trapped elements and their thermal stability with respect to hydrogen content is studied using ion beam analysis (IBA) techniques. The elemental concentrations of the films were measured in the films deposited on silicon substrates with a 2.5 MeV of H{sup +} beam, which is used to perform Rutherford Backscattering Spectrometry (RBS) and Non-Rutherford Backscattering spectrometry (NRBS) and with 16 MeV of O{sup 5+} beam, used to perform Elastic Recoil Detection Analysis (ERDA). Effect of bias on the thermal stability of trapped hydrogen in the films has been studied. As the films were heated in-situ in vacuum using a non-gassy button heater, hydrogen was found to be decreasing around 400 deg. C.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Western Michigan University-Kalamazoo, MI 49008 (United States)
  2. Ohio University-Athens, OH 45701 (United States)
Publication Date:
OSTI Identifier:
21289543
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1099; Journal Issue: 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3120040; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ARGON; CARBON; DEPOSITION; HYDROGEN IONS 1 PLUS; HYDROGENATION; ION BEAMS; ION MICROPROBE ANALYSIS; MEV RANGE; MULTICHARGED IONS; MULTI-ELEMENT ANALYSIS; OXYGEN IONS; QUANTITATIVE CHEMICAL ANALYSIS; RECOILS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS

Citation Formats

Nandasiri, M I, Moore, A, Garratt, E, Wickey, K J, AlFaify, S, Gao, X, Kayani, A, and Ingram, D. Ion Beam Analysis of the Thermal Stability of Hydrogenated Diamond-Like Carbon Thin Films on Si Substrate. United States: N. p., 2009. Web. doi:10.1063/1.3120040.
Nandasiri, M I, Moore, A, Garratt, E, Wickey, K J, AlFaify, S, Gao, X, Kayani, A, & Ingram, D. Ion Beam Analysis of the Thermal Stability of Hydrogenated Diamond-Like Carbon Thin Films on Si Substrate. United States. doi:10.1063/1.3120040.
Nandasiri, M I, Moore, A, Garratt, E, Wickey, K J, AlFaify, S, Gao, X, Kayani, A, and Ingram, D. Tue . "Ion Beam Analysis of the Thermal Stability of Hydrogenated Diamond-Like Carbon Thin Films on Si Substrate". United States. doi:10.1063/1.3120040.
@article{osti_21289543,
title = {Ion Beam Analysis of the Thermal Stability of Hydrogenated Diamond-Like Carbon Thin Films on Si Substrate},
author = {Nandasiri, M I and Moore, A and Garratt, E and Wickey, K J and AlFaify, S and Gao, X and Kayani, A and Ingram, D},
abstractNote = {Unbalanced magnetron sputtering deposition of C-H films has been performed with various levels of negative substrate bias and with a fixed flow rate of hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The effect of hydrogenation on the final concentration of trapped elements and their thermal stability with respect to hydrogen content is studied using ion beam analysis (IBA) techniques. The elemental concentrations of the films were measured in the films deposited on silicon substrates with a 2.5 MeV of H{sup +} beam, which is used to perform Rutherford Backscattering Spectrometry (RBS) and Non-Rutherford Backscattering spectrometry (NRBS) and with 16 MeV of O{sup 5+} beam, used to perform Elastic Recoil Detection Analysis (ERDA). Effect of bias on the thermal stability of trapped hydrogen in the films has been studied. As the films were heated in-situ in vacuum using a non-gassy button heater, hydrogen was found to be decreasing around 400 deg. C.},
doi = {10.1063/1.3120040},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1099,
place = {United States},
year = {2009},
month = {3}
}