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Title: Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration

Abstract

We investigate the dependence of the electrical resistivity and magnetoresistance of single crystalline micrometer-sized graphite samples of a few tens of nanometers thick on the defect concentration produced by irradiation at low fluences. We show that the carrier density of graphite n is extremely sensitive to the induced defects for concentrations as low as {approx}0.1 ppm and follows n{approx}1/R{sub V}{sup 2} with R{sub V} the distance between defects in the graphene plane. These and Shubnikov-de Haas oscillations results indicate that at least a relevant part of the carrier densities measured in graphite is not intrinsic.

Authors:
; ; ; ; ;  [1]
  1. Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany)
Publication Date:
OSTI Identifier:
21287110
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 80; Journal Issue: 19; Other Information: DOI: 10.1103/PhysRevB.80.195402; (c) 2009 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; CARRIER DENSITY; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; GRAPHITE; IRRADIATION; MAGNETORESISTANCE; MONOCRYSTALS; NANOSTRUCTURES; OSCILLATIONS; SHUBNIKOV-DE HAAS EFFECT

Citation Formats

Arndt, A, Spoddig, D, Esquinazi, P, Barzola-Quiquia, J, Dusari, S, and Butz, T. Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration. United States: N. p., 2009. Web. doi:10.1103/PHYSREVB.80.195402.
Arndt, A, Spoddig, D, Esquinazi, P, Barzola-Quiquia, J, Dusari, S, & Butz, T. Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration. United States. https://doi.org/10.1103/PHYSREVB.80.195402
Arndt, A, Spoddig, D, Esquinazi, P, Barzola-Quiquia, J, Dusari, S, and Butz, T. 2009. "Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration". United States. https://doi.org/10.1103/PHYSREVB.80.195402.
@article{osti_21287110,
title = {Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration},
author = {Arndt, A and Spoddig, D and Esquinazi, P and Barzola-Quiquia, J and Dusari, S and Butz, T},
abstractNote = {We investigate the dependence of the electrical resistivity and magnetoresistance of single crystalline micrometer-sized graphite samples of a few tens of nanometers thick on the defect concentration produced by irradiation at low fluences. We show that the carrier density of graphite n is extremely sensitive to the induced defects for concentrations as low as {approx}0.1 ppm and follows n{approx}1/R{sub V}{sup 2} with R{sub V} the distance between defects in the graphene plane. These and Shubnikov-de Haas oscillations results indicate that at least a relevant part of the carrier densities measured in graphite is not intrinsic.},
doi = {10.1103/PHYSREVB.80.195402},
url = {https://www.osti.gov/biblio/21287110}, journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 19,
volume = 80,
place = {United States},
year = {Sun Nov 15 00:00:00 EST 2009},
month = {Sun Nov 15 00:00:00 EST 2009}
}