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Title: Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba's spin-orbit coupling in a heterojunction with a lateral superlattice

Abstract

Absorption of linearly polarized electromagnetic radiation by a two-dimensional electron gas in a lateral-superlattice structure subjected to a perpendicular magnetic field is calculated analytically and numerically for the first time, taking into account Rashba's spin-orbit coupling and Zeeman splitting. Calculations are carried out for semiconductor heterostructures characterized by weak and sufficiently strong spin-orbit coupling (AlGaAs/GaAs and GaAs/InGaAs, respectively). The nature of the new effect related to intense magnetoabsorption of electromagnetic radiation in the submillimeter range by a two-dimensional electron gas in a superlattice with strong spin-orbit coupling is analyzed. Magneto-optical experiments aimed at studying spin-Peierls states of charge carriers are discussed and, in this context, optimum parameters for semiconductor structures with spin-orbit coupling and values of the magnetic field are determined.

Authors:
 [1]
  1. Lobachevskii State University of Nizhni Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
21260424
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 43; Journal Issue: 2; Other Information: DOI: 10.1134/S106378260902016X; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ALUMINIUM ARSENIDES; CHARGE CARRIERS; ELECTROMAGNETIC RADIATION; ELECTRON GAS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; L-S COUPLING; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS; SUPERLATTICES; TWO-DIMENSIONAL CALCULATIONS; ZEEMAN EFFECT

Citation Formats

Perov, A. A., E-mail: perov@phys.unn.ru, and Solnyshkova, L V. Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba's spin-orbit coupling in a heterojunction with a lateral superlattice. United States: N. p., 2009. Web. doi:10.1134/S106378260902016X.
Perov, A. A., E-mail: perov@phys.unn.ru, & Solnyshkova, L V. Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba's spin-orbit coupling in a heterojunction with a lateral superlattice. United States. https://doi.org/10.1134/S106378260902016X
Perov, A. A., E-mail: perov@phys.unn.ru, and Solnyshkova, L V. Sun . "Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba's spin-orbit coupling in a heterojunction with a lateral superlattice". United States. https://doi.org/10.1134/S106378260902016X.
@article{osti_21260424,
title = {Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba's spin-orbit coupling in a heterojunction with a lateral superlattice},
author = {Perov, A. A., E-mail: perov@phys.unn.ru and Solnyshkova, L V},
abstractNote = {Absorption of linearly polarized electromagnetic radiation by a two-dimensional electron gas in a lateral-superlattice structure subjected to a perpendicular magnetic field is calculated analytically and numerically for the first time, taking into account Rashba's spin-orbit coupling and Zeeman splitting. Calculations are carried out for semiconductor heterostructures characterized by weak and sufficiently strong spin-orbit coupling (AlGaAs/GaAs and GaAs/InGaAs, respectively). The nature of the new effect related to intense magnetoabsorption of electromagnetic radiation in the submillimeter range by a two-dimensional electron gas in a superlattice with strong spin-orbit coupling is analyzed. Magneto-optical experiments aimed at studying spin-Peierls states of charge carriers are discussed and, in this context, optimum parameters for semiconductor structures with spin-orbit coupling and values of the magnetic field are determined.},
doi = {10.1134/S106378260902016X},
url = {https://www.osti.gov/biblio/21260424}, journal = {Semiconductors},
issn = {1063-7826},
number = 2,
volume = 43,
place = {United States},
year = {2009},
month = {2}
}