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Title: Effect of the number of pairs of the layers on the quality of the superlattices of the In{sub x}Ga{sub 1-x}As/GaAs/.../GaAs(001) type grown by molecular beam epitaxy under computer control

Journal Article · · Semiconductors
 [1]
  1. Russian Academy of Sciences, Institute of Radio Engineering and Electronics (Fryazino Branch) (Russian Federation), E-mail: gfk217@ire216.msk.su

By the specified program of computer control over the growth process, superlattices of the In{sub x}Ga{sub 1-x}As/GaAs/.../GaAs(001) type with the number of alternating pairs N{sub 1} = 12, N{sub 2} = 6, and N{sub 3} = 3 were grown. Using the X-ray methods of quantitative analysis, the values of periods T{sub 1} = 22 nm, T{sub 2} = 22.5 nm, and T{sub 3} = 22.3 nm and the In content x{sub 1} = 0.09, x{sub 2} = 0.091, and x{sub 3} = 0.092 in these superlattices are measured. In the superlattice with N{sub 1} = 12, the plastic deformation is detected. In superlattices with N{sub 2} = 6 and N{sub 3} = 3, no plastic deformation during the growth was observed. The obtained magnitudes of the periods turned out smaller by a factor of approximately 2 and the alloy concentration turned out smaller by 1/3 than it was specified by the computer program. The measured and calculated values of elastic stresses turned out equal to {sigma}{sub 2N} = 2.43 x 10{sup 6} Pa and {sigma}{sup 2N-1} = -0.88 x 10{sup 9} Pa, at which the plastic deformation took place in the layers of the superlattice with N{sub 1} = 12. In superlattices with N{sub 2} = 6 and N{sub 3} = 3, the elastic stresses were {sigma}{sub 2N} = 1.96 x 10 6 Pa, {sigma}{sub 2N-1} = -1.45 x 10{sup 9} Pa and {sigma}{sub 2N} = 0.99 x 10{sup 6} Pa, {sigma}{sub 2N-1} = -1.88 x 10{sup 9} Pa, respectively. These stresses turned out insufficient to initiate the process of dislocation generation.

OSTI ID:
21260384
Journal Information:
Semiconductors, Vol. 43, Issue 4; Other Information: DOI: 10.1134/S1063782609040125; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English