The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes
- Moscow Institute of Steel and Alloys (State Technical University), Institute of Physical Chemistry of Materials (Russian Federation)
Simulation of multicomponent AlInGaN-based heterostructures for their use in light-emitting diodes is performed. The effect of nonuniform distribution of In atoms in the light-emitting 'nanodiodes' on the working characteristics of the device in general are determined. A model describing the structure of multicomponent AlInGaN heterostructures for light-emitting diodes is developed.
- OSTI ID:
- 21260378
- Journal Information:
- Semiconductors, Vol. 43, Issue 4; Other Information: DOI: 10.1134/S1063782609040228; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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