Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas

Journal Article · Wed Apr 15 00:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S106378260904023X· OSTI ID:21260377

Antonov, A V; Gavrilenko, V I; Morozov, S V ^[1]; Teppe, F; Knap, W ^[2]

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1. Russian Academy of Sciences, Institute for the Physics of Microstructures (Russian Federation)
2. CNRS-Universite Montpellier 2, Groupe d'Etude de Semiconducteurs (France)

Resonance detection of terahertz radiation by submicrometer field-effect GaAs/AlGaAs transistors (with the gate length L = 250 nm) with two-dimensional electron gas in the channel has been studied at T = 4.2 K. For these transistors, it is shown for the first time that the maximum of the response (the drain-source photovoltage) shifts with an increasing frequency to the region of higher gate voltages in accordance with the Dyakonov-Shur theory. It is shown that, as temperature is increased to 77 K, the dependence of the photovoltage on the gate voltage becomes nonresonant, which is caused by a decrease in the mobility.

• OSTI ID: 21260377
• Journal Information: Semiconductors, Vol. 43, Issue 4; Other Information: DOI: 10.1134/S106378260904023X; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ELECTRIC POTENTIAL
ELECTRON GAS
GALLIUM ARSENIDES
RESONANCE
TRANSISTORS