Solar cells based on gallium antimonide

Andreev, V M; Sorokina, S V; Timoshina, N Kh; Shvarts, M Z

doi:10.1134/S1063782609050236

Title: Solar cells based on gallium antimonide

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Abstract

Liquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is {eta} = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum)

Authors:

Andreev, V M; Sorokina, S V; Timoshina, N Kh; Shvarts, M Z ^[1]

Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Publication Date:: Fri May 15 00:00:00 EDT 2009

OSTI Identifier:: 21260361

Resource Type:: Journal Article

Journal Name:: Semiconductors

Additional Journal Information:: Journal Volume: 43; Journal Issue: 5; Other Information: DOI: 10.1134/S1063782609050236; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CONCENTRATION RATIO; DIFFUSION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; LIQUID PHASE EPITAXY; PHOTOVOLTAIC CONVERSION; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR RADIATION; SPECTRA

Citation Formats


                    Andreev, V M, Sorokina, S V, Timoshina, N Kh, Khvostikov, V. P., E-mail: vikhv@scell.ioffe.ru, and Shvarts, M Z. Solar cells based on gallium antimonide.  United States: N. p., 2009. 
        Web.  doi:10.1134/S1063782609050236.

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                    Andreev, V M, Sorokina, S V, Timoshina, N Kh, Khvostikov, V. P., E-mail: vikhv@scell.ioffe.ru, & Shvarts, M Z. Solar cells based on gallium antimonide.  United States.  https://doi.org/10.1134/S1063782609050236

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                    Andreev, V M, Sorokina, S V, Timoshina, N Kh, Khvostikov, V. P., E-mail: vikhv@scell.ioffe.ru, and Shvarts, M Z. 2009.  
        "Solar cells based on gallium antimonide".  United States.  https://doi.org/10.1134/S1063782609050236.

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@article{osti_21260361,

  title        = {Solar cells based on gallium antimonide},

  author       = {Andreev, V M and Sorokina, S V and Timoshina, N Kh and Khvostikov, V. P., E-mail: vikhv@scell.ioffe.ru and Shvarts, M Z},

  abstractNote = {Liquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is {eta} = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum)},

  doi          = {10.1134/S1063782609050236},

  url          = {https://www.osti.gov/biblio/21260361},
  journal      = {Semiconductors},

  issn         = {1063-7826},

  number       = 5,

  volume       = 43,

  place        = {United States},

  year         = {Fri May 15 00:00:00 EDT 2009},

  month        = {Fri May 15 00:00:00 EDT 2009}

}

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