Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots
- Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics (Russian Federation)
Spectra of lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots, fabricated by molecular-beam epitaxy are studied. The photoresponse caused by optical transitions between hole levels of quantum dots and Si electronic states was observed in the energy range of 1.1-0.3 eV at T = 78 K. It was shown that the electronic states localized in the region of Si band bending near the Ge/Si interface mainly contribute to lateral photoconductivity. The use of the quantum box model for describing hole levels of quantum dots made it possible to understand the origin of peaks observed in the photoconductivity spectra. A detailed energy-level diagram of hole levels of quantum dots and optical transitions in Ge/Si structures with strained Ge quantum dots was constructed.
- OSTI ID:
- 21260310
- Journal Information:
- Semiconductors, Vol. 43, Issue 8; Other Information: DOI: 10.1134/S1063782609080077; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots
Lateral photoconductivity in structures with Ge/Si quantum dots