Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

Journal Article · Sat Aug 15 00:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609080259· OSTI ID:21260298

Parkhomenko, Ya A; Gushchina, E V; Ankudinov, A V; Mikhailova, V P; Bert, N A; Yakovlev, Yu P ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Arrays of coherent InSb quantum dots (QDs) have been fabricated by liquid-phase epitaxy on InAs substrates in the temperature range T = 420-450{sup o}C. The QDs with a density of (0.9-2) x 10{sup 10} cm{sup -2} were 3 nm high and 13 nm in diameter. A bimodal QD size distribution was observed, which was accounted for by a combined growth mechanism of these nanoobjects. Structural characteristics of a separate InSb QD formed on the InAs surface were studied for the first time by atomic-force and transmission electron microscopies. Moire fringes were observed for the first time for QDs in the InSb/InAs system, with the moire period of 3.5 nm corresponding to InSb QDs without an admixture of arsenic.

• OSTI ID: 21260298
• Journal Information: Semiconductors, Vol. 43, Issue 8; Other Information: DOI: 10.1134/S1063782609080259; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

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ARSENIC
INDIUM ANTIMONIDES
INDIUM ARSENIDES
LIQUID PHASE EPITAXY
QUANTUM DOTS
SURFACES
TEMPERATURE RANGE 0400-1000 K
TRANSMISSION ELECTRON MICROSCOPY