Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Cd{sub x}Hg{sub 1-x}Te films with x {approx} 0.22 and thickness of {approx}10 {mu}m have been grown by molecular-beam epitaxy on gallium arsenide substrates and doped in situ with arsenic. Activation annealing of doped films provided p-type conduction with a hole density of up to 10{sup 17} cm{sup -3}. The influence exerted by the arsenic cracking zone temperature on the efficiency of arsenic incorporation into the CdHgTe film was studied. A model describing the dependence of the arsenic concentration in the films on the arsenic cracking zone temperature was suggested. A comparison of the model and the experimental data demonstrated that the incorporation efficiency of diatomic arsenic is approximately two orders of magnitude higher than that of tetratomic arsenic.
- OSTI ID:
- 21255666
- Journal Information:
- Semiconductors, Vol. 42, Issue 6; Other Information: DOI: 10.1134/S1063782608060043; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical characteristics of the CdTe-n-CdHgTe structure fabricated in a single molecular-beam epitaxy process
Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg{sub 8} structure