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Title: CdTe as a passivating layer in CdTe/HgCdTe heterostructures

Abstract

CdTe/Hg{sub 1-x}Cd{sub x}Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg{sub 1-x}Cd{sub x}Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg{sub 1-x}Cd{sub x}Te films are reported.

Authors:
 [1]; ;  [2];  [3]; ;  [4]
  1. Drogobych State Pedagogical University (Ukraine)
  2. Lviv Polytechnic National University (Ukraine)
  3. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
  4. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
21255651
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 42; Journal Issue: 7; Other Information: DOI: 10.1134/S106378260807004X; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM TELLURIDES; ELECTRON DIFFRACTION; FILMS; LAYERS; MICROHARDNESS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PASSIVATION; POLYCRYSTALS; X-RAY DIFFRACTION

Citation Formats

Virt, I S, Kurilo, I V, Rudyi, I A, Sizov, F F, Mikhailov, N N, and Smirnov, R N. CdTe as a passivating layer in CdTe/HgCdTe heterostructures. United States: N. p., 2008. Web. doi:10.1134/S106378260807004X.
Virt, I S, Kurilo, I V, Rudyi, I A, Sizov, F F, Mikhailov, N N, & Smirnov, R N. CdTe as a passivating layer in CdTe/HgCdTe heterostructures. United States. doi:10.1134/S106378260807004X.
Virt, I S, Kurilo, I V, Rudyi, I A, Sizov, F F, Mikhailov, N N, and Smirnov, R N. Tue . "CdTe as a passivating layer in CdTe/HgCdTe heterostructures". United States. doi:10.1134/S106378260807004X.
@article{osti_21255651,
title = {CdTe as a passivating layer in CdTe/HgCdTe heterostructures},
author = {Virt, I S and Kurilo, I V and Rudyi, I A and Sizov, F F and Mikhailov, N N and Smirnov, R N},
abstractNote = {CdTe/Hg{sub 1-x}Cd{sub x}Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg{sub 1-x}Cd{sub x}Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg{sub 1-x}Cd{sub x}Te films are reported.},
doi = {10.1134/S106378260807004X},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 42,
place = {United States},
year = {2008},
month = {7}
}