Effect of oxygen on structure and electronic properties of silicon nanoclusters Si{sub n} (n = 5, 6, 10, 18)
- Russian Academy of Sciences, Institute of Materials Science, Far East Division (Russian Federation)
Methods of the theory of electron-density functional and pseudopotentials are used for studying the effect of oxygen on the geometry and electronic structure of small silicon clusters Si{sub n}, (n = 5, 6, 10, 18). It is shown that the energy gap varies and, as a rule, decreases for such systems depending on the position and number of oxygen atoms.
- OSTI ID:
- 21255647
- Journal Information:
- Semiconductors, Vol. 42, Issue 7; Other Information: DOI: 10.1134/S1063782608070099; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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