Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers
- Voronezh State University (Russian Federation)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.
- OSTI ID:
- 21255619
- Journal Information:
- Semiconductors, Vol. 42, Issue 9; Other Information: DOI: 10.1134/S1063782608090108; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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