Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and {delta}-doped on two sides
- Russian Academy of Sciences, Institute of UHF Semiconductor Electronics (Russian Federation)
- Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
The pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructure {delta}-doped with silicon on both sides and used for fabrication of high-power transistors is optimized to obtain a high concentration n{sub s} and mobility of two-dimensional electron gas in the quantum well (n{sub s} {approx} 3 x 10{sup 12} cm{sup -2}). Electrical and structural characteristics of the samples grown by molecular-beam epitaxy with various doping levels are studied. It is shown that the mobility and concentration of electrons varies as doping level is increased and the subbands of dimensional quantization are sequentially filled. In order to analyze the distribution of electrons in subbands of the heterostructure, the Shubnikov-de Haas oscillations at the liquid helium temperature were studied. The quality of the heterostructure layers was assessed using the method of X-ray diffraction. The data of photoluminescence spectroscopy are in good agreement with the results of calculations of the band structure.
- OSTI ID:
- 21255615
- Journal Information:
- Semiconductors, Vol. 42, Issue 9; Other Information: DOI: 10.1134/S1063782608090145; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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