Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix

Journal Article · Mon Sep 15 00:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608090170· OSTI ID:21255613

Brunkov, P N ^[1]; Egorov, A Yu; Zhukov, A E ^[2]; Konnikov, S G ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Russian Academy of Sciences, St. Petersburg Physics and Technology Centre for Research and Education (Russian Federation)

Electron emission from multilayer arrays of vertically coupled InAs quantum dots into the n-GaAs matrix in Schottky-barrier structures (electron concentration n {approx} 2 x 10{sup 16} cm{sup -3}) is studied by admittance spectroscopy. It is established that, in the temperature region below {approx}70 K, electron emission in a rate range of 3 x 10{sup 4}-3 x 10{sup 6} s{sup -1} proceeds via thermally activated tunneling through intermediate virtual states. As the number of layers in the quantum dot array increases from three to ten, a decrease in the electron emission rate is observed.

• OSTI ID: 21255613
• Journal Information: Semiconductors, Vol. 42, Issue 9; Other Information: DOI: 10.1134/S1063782608090170; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
ELECTRON EMISSION
ELECTRONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
QUANTUM DOTS
SPECTROSCOPY
TUNNEL EFFECT
VIRTUAL STATES