Effect of potential fluctuations on the energy structure of GaAs/AlGaAs quantum wells with A{sup +} centers
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
The transformation of photoluminescence spectra associated with A{sup +} centers in GaAs/AlGaAs quantum wells due to changes in the pumping level and temperature is analyzed. It is shown that an important part in the formation of the energy structure of the system of GaAs/AlGaAs quantum wells is played by electrostatic potential fluctuations responsible for the spatial redistribution of charge and the appearance of free holes.
- OSTI ID:
- 21255608
- Journal Information:
- Semiconductors, Vol. 42, Issue 10; Other Information: DOI: 10.1134/S1063782608100102; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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