Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy
- Tomsk State University (Russian Federation)
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
The effect of near-surface graded-gap layers on the electrical characteristics of MIS structures fabricated based on heteroepitaxial Hg{sub 1-x} Cd{sub x}Te films grown by molecular beam epitaxy with a two-layer SiO{sub 2}/Si{sub 3}N{sub 4} insulator and anodic oxide film is studied experimentally. It is shown that a larger modulation of capacitance (depth and width of the valley) is observed compared with the structures without the graded-gap layer. The field dependences of photovoltage of MIS structures with the graded-gap layers had a classical form and were characterized by a drop only in the enrichment region. For the structures without the graded-gap layer with x = 0.22, a drop in the voltage dependence of the photocurrent is observed in the region of pronounced inversion. This drop is governed by limitation of the space charge region by processes of tunneling generation via deep levels. The properties of the HgCdTe-insulator interfaces are studied.
- OSTI ID:
- 21255563
- Journal Information:
- Semiconductors, Vol. 42, Issue 11; Other Information: DOI: 10.1134/S1063782608110109; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes
Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells