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Title: Optima XE Single Wafer High Energy Ion Implanter

Abstract

The Optima XE is the first production worthy single wafer high energy implanter. The new system combines a state-of-art single wafer endstation capable of throughputs in excess of 400 wafers/hour with a production-proven RF linear accelerator technology. Axcelis has been evolving and refining RF Linac technology since the introduction of the NV1000 in 1986. The Optima XE provides production worthy beam currents up to energies of 1.2 MeV for P{sup +}, 2.9 MeV for P{sup ++}, and 1.5 MeV for B{sup +}. Energies as low as 10 keV and tilt angles as high as 45 degrees are also available., allowing the implanter to be used for a wide variety of traditional medium current implants to ensure high equipment utilization. The single wafer endstation provides precise implant angle control across wafer and wafer to wafer. In addition, Optima XE's unique dose control system allows compensation of photoresist outgassing effects without relying on traditional pressure-based methods. We describe the specific features, angle control and dosimetry of the Optima XE and their applications in addressing the ever-tightening demands for more precise process controls and higher productivity.

Authors:
; ; ; ;  [1]
  1. Axcelis Technologies, Inc. 108 Cherry Hill Drive, Beverly, MA 01915 (United States)
Publication Date:
OSTI Identifier:
21251667
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1066; Journal Issue: 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033612; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; BEAM CURRENTS; BORON IONS; CONTROL SYSTEMS; DEGASSING; DOSIMETRY; INTEGRATED CIRCUITS; ION BEAMS; ION IMPLANTATION; KEV RANGE 01-10; LINEAR ACCELERATORS; MEV RANGE 01-10; MEV RANGE 10-100; PHOSPHORUS IONS; PROCESS CONTROL

Citation Formats

Satoh, Shu, Ferrara, Joseph, Bell, Edward, Patel, Shital, and Sieradzki, Manny. Optima XE Single Wafer High Energy Ion Implanter. United States: N. p., 2008. Web. doi:10.1063/1.3033612.
Satoh, Shu, Ferrara, Joseph, Bell, Edward, Patel, Shital, & Sieradzki, Manny. Optima XE Single Wafer High Energy Ion Implanter. United States. https://doi.org/10.1063/1.3033612
Satoh, Shu, Ferrara, Joseph, Bell, Edward, Patel, Shital, and Sieradzki, Manny. 2008. "Optima XE Single Wafer High Energy Ion Implanter". United States. https://doi.org/10.1063/1.3033612.
@article{osti_21251667,
title = {Optima XE Single Wafer High Energy Ion Implanter},
author = {Satoh, Shu and Ferrara, Joseph and Bell, Edward and Patel, Shital and Sieradzki, Manny},
abstractNote = {The Optima XE is the first production worthy single wafer high energy implanter. The new system combines a state-of-art single wafer endstation capable of throughputs in excess of 400 wafers/hour with a production-proven RF linear accelerator technology. Axcelis has been evolving and refining RF Linac technology since the introduction of the NV1000 in 1986. The Optima XE provides production worthy beam currents up to energies of 1.2 MeV for P{sup +}, 2.9 MeV for P{sup ++}, and 1.5 MeV for B{sup +}. Energies as low as 10 keV and tilt angles as high as 45 degrees are also available., allowing the implanter to be used for a wide variety of traditional medium current implants to ensure high equipment utilization. The single wafer endstation provides precise implant angle control across wafer and wafer to wafer. In addition, Optima XE's unique dose control system allows compensation of photoresist outgassing effects without relying on traditional pressure-based methods. We describe the specific features, angle control and dosimetry of the Optima XE and their applications in addressing the ever-tightening demands for more precise process controls and higher productivity.},
doi = {10.1063/1.3033612},
url = {https://www.osti.gov/biblio/21251667}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1066,
place = {United States},
year = {Mon Nov 03 00:00:00 EST 2008},
month = {Mon Nov 03 00:00:00 EST 2008}
}