Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting
Abstract
The aim of this report is to present and justify a new approach for carrier density profiling in ultra-shallow junction (USJ) layer. This new approach is based on a capacitance measurement model, which takes series impedance, shunt resistance and the presence of a boron skin on the USJ layer into account. It allows us to extract the depletion layer capacitances in the USJ layer from C-V plotting more accurately and hence to obtain better carrier density profiles. Based on this new approach the carrier density profiles of different USJ layers with and without halo-style implants are obtained and discussed.
- Authors:
-
- Four Dimensions, Inc., 3140 Diablo Ave, Hayward, California, 94545 (United States)
- Mattson Technology, Inc. Fremont, California (United States)
- Mattson Technology Canada, Inc., Vancouver (Canada)
- Mattson Thermal Products GmbH, Dornstadt (Germany)
- IHP, Frankfurt (Oder) (Germany)
- Publication Date:
- OSTI Identifier:
- 21251654
- Resource Type:
- Journal Article
- Journal Name:
- AIP Conference Proceedings
- Additional Journal Information:
- Journal Volume: 1066; Journal Issue: 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033588; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BORON; CAPACITANCE; CARRIER DENSITY; DEPLETION LAYER; IMPEDANCE; ION IMPLANTATION; SEMICONDUCTOR DEVICES
Citation Formats
Chen, James, Dimitrov, Dimitar, Dimitrova, Tatiana, Timans, Paul, Gelpey, Jeff, McCoy, Steve, Lerch, Wilfried, Paul, Silke, and Bolze, Detlef. Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting. United States: N. p., 2008.
Web. doi:10.1063/1.3033588.
Chen, James, Dimitrov, Dimitar, Dimitrova, Tatiana, Timans, Paul, Gelpey, Jeff, McCoy, Steve, Lerch, Wilfried, Paul, Silke, & Bolze, Detlef. Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting. United States. https://doi.org/10.1063/1.3033588
Chen, James, Dimitrov, Dimitar, Dimitrova, Tatiana, Timans, Paul, Gelpey, Jeff, McCoy, Steve, Lerch, Wilfried, Paul, Silke, and Bolze, Detlef. 2008.
"Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting". United States. https://doi.org/10.1063/1.3033588.
@article{osti_21251654,
title = {Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting},
author = {Chen, James and Dimitrov, Dimitar and Dimitrova, Tatiana and Timans, Paul and Gelpey, Jeff and McCoy, Steve and Lerch, Wilfried and Paul, Silke and Bolze, Detlef},
abstractNote = {The aim of this report is to present and justify a new approach for carrier density profiling in ultra-shallow junction (USJ) layer. This new approach is based on a capacitance measurement model, which takes series impedance, shunt resistance and the presence of a boron skin on the USJ layer into account. It allows us to extract the depletion layer capacitances in the USJ layer from C-V plotting more accurately and hence to obtain better carrier density profiles. Based on this new approach the carrier density profiles of different USJ layers with and without halo-style implants are obtained and discussed.},
doi = {10.1063/1.3033588},
url = {https://www.osti.gov/biblio/21251654},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1066,
place = {United States},
year = {Mon Nov 03 00:00:00 EST 2008},
month = {Mon Nov 03 00:00:00 EST 2008}
}
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