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Title: Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting

Abstract

The aim of this report is to present and justify a new approach for carrier density profiling in ultra-shallow junction (USJ) layer. This new approach is based on a capacitance measurement model, which takes series impedance, shunt resistance and the presence of a boron skin on the USJ layer into account. It allows us to extract the depletion layer capacitances in the USJ layer from C-V plotting more accurately and hence to obtain better carrier density profiles. Based on this new approach the carrier density profiles of different USJ layers with and without halo-style implants are obtained and discussed.

Authors:
; ;  [1];  [2]; ;  [3]; ;  [4];  [5]
  1. Four Dimensions, Inc., 3140 Diablo Ave, Hayward, California, 94545 (United States)
  2. Mattson Technology, Inc. Fremont, California (United States)
  3. Mattson Technology Canada, Inc., Vancouver (Canada)
  4. Mattson Thermal Products GmbH, Dornstadt (Germany)
  5. IHP, Frankfurt (Oder) (Germany)
Publication Date:
OSTI Identifier:
21251654
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1066; Journal Issue: 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033588; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; CAPACITANCE; CARRIER DENSITY; DEPLETION LAYER; IMPEDANCE; ION IMPLANTATION; SEMICONDUCTOR DEVICES

Citation Formats

Chen, James, Dimitrov, Dimitar, Dimitrova, Tatiana, Timans, Paul, Gelpey, Jeff, McCoy, Steve, Lerch, Wilfried, Paul, Silke, and Bolze, Detlef. Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting. United States: N. p., 2008. Web. doi:10.1063/1.3033588.
Chen, James, Dimitrov, Dimitar, Dimitrova, Tatiana, Timans, Paul, Gelpey, Jeff, McCoy, Steve, Lerch, Wilfried, Paul, Silke, & Bolze, Detlef. Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting. United States. https://doi.org/10.1063/1.3033588
Chen, James, Dimitrov, Dimitar, Dimitrova, Tatiana, Timans, Paul, Gelpey, Jeff, McCoy, Steve, Lerch, Wilfried, Paul, Silke, and Bolze, Detlef. 2008. "Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting". United States. https://doi.org/10.1063/1.3033588.
@article{osti_21251654,
title = {Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting},
author = {Chen, James and Dimitrov, Dimitar and Dimitrova, Tatiana and Timans, Paul and Gelpey, Jeff and McCoy, Steve and Lerch, Wilfried and Paul, Silke and Bolze, Detlef},
abstractNote = {The aim of this report is to present and justify a new approach for carrier density profiling in ultra-shallow junction (USJ) layer. This new approach is based on a capacitance measurement model, which takes series impedance, shunt resistance and the presence of a boron skin on the USJ layer into account. It allows us to extract the depletion layer capacitances in the USJ layer from C-V plotting more accurately and hence to obtain better carrier density profiles. Based on this new approach the carrier density profiles of different USJ layers with and without halo-style implants are obtained and discussed.},
doi = {10.1063/1.3033588},
url = {https://www.osti.gov/biblio/21251654}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1066,
place = {United States},
year = {Mon Nov 03 00:00:00 EST 2008},
month = {Mon Nov 03 00:00:00 EST 2008}
}