Point Defects Creation by Swift Heavy Ion Irradiation Induced Low Energy Electrons in YBa{sub 2}Cu{sub 3}O{sub 7-y} through Dissociative Recombination
- Department of Physics, Utkal University, Bhubaneswar-751004 (India)
- Tata Institute of Fundamental Research, Mumbai-400005 (India)
- Department of Physics, National Institute of Technology, Rourkela-769008 (India)
- Inter University Accelerator Center, New Delhi-110067 (India)
Our in-situ temperature dependent resistance studies in a set of YBa{sub 2}Cu{sub 3}O{sub 7-y}(YBCO) thin films irradiated with 200 MeV Ag ions at 79 K show that in addition to amorphized latent tracks, a large concentration of point defects are created by the secondary electrons emitted radially from the ion path. Detailed calculation of the energetics indicates that in the YBCO matrix, these secondary electrons cannot create defect by direct elastic knock-on process. We propose an inelastic interaction of the secondary electrons with the YBCO matrix, which results into defect creation by a process similar to dissociative recombination. Our study shows that accumulation of point defects during irradiation is accompanied by self-organization of point defect into clustering and phase segregation.
- OSTI ID:
- 21251600
- Journal Information:
- AIP Conference Proceedings, Vol. 1063, Issue 1; Conference: IWMNMM-2008: International workshop on mesoscopic, nanoscopic and macroscopic materials, Bhubaneswar (India), 2-4 Jan 2008; Other Information: DOI: 10.1063/1.3027166; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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