Channels of radiative recombination and phase transitions in a system of nonequilibrium carriers in a Si{sub 0.93}Ge{sub 0.07}/Si thin quantum well
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
The 'exciton gas-plasma' transition (the Mott transition) in a Si{sub 0.93}Ge{sub 0.07}/Si thin quantum well is investigated using low-temperature photoluminescence. It is demonstrated that this transition is smooth and occurs in the concentration range from approximately 6 x 10{sup 10} to 1.2 x 10{sup 12} cm{sup -2}. At a temperature of 23 K and excitation densities of higher than 10 W/cm{sup 2}, the shape and location of the luminescence line associated with the electron-hole plasma remain unchanged with an increase in the pump density. This can indicate the occurrence of an 'electron-hole gas-liquid' transition. It is shown that, in the spectrum of the quantum well, the luminescence of boron-bound excitons dominates at liquid-helium temperatures and low excitation densities, whereas the free-exciton luminescence dominates at temperatures above 10 K. The influence of the homogeneous and inhomogeneous broadening on the electron-hole plasma and exciton luminescence is discussed.
- OSTI ID:
- 21241887
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 107, Issue 5; Other Information: DOI: 10.1134/S1063776108110150; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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