Study on depth profiles of hydrogen in boron-doped diamond films by elastic recoil detection analysis
- Department of Modern Physics, Lanzhou University, Lanzhou, Gansu Province, 730001 (China)
- Center for Interfacial Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
Depth profiles of hydrogen in a set of boron-doped diamond films were studied by a convolution method to simulate the recoil proton spectra induced by {sup 4}He ions of 3 MeV. Results show that the hydrogen depth profiles in these varying-level boron-doped diamond films exhibit a similar three-layer structure: the surface absorption layer, the diffusion region, and the uniform hydrogen-containing matrix. Hydrogen concentrations at all the layers, especially in the surface layer, are found to increase significantly with the boron-doping concentration, implying that more dangling-bonds and/or CH-bonds were introduced by the boron-doping process. While the increased dangling-bonds and/or CH-bonds degrade the microstructure of the diamond films as observed by Raman Shift, the boron-doping significantly reduces the specific resistance and makes semiconducting diamond films possible. Hydrogen mobility (or hydrogen loss) in these films as a result of the {sup 4}He beam irradiation was also observed and discussed.
- OSTI ID:
- 21208000
- Journal Information:
- AIP Conference Proceedings, Vol. 475, Issue 1; Conference: 15. international conference on the application of accelerators in research and industry, Denton, TX (United States), 4-7 Nov 1998; Other Information: DOI: 10.1063/1.59183; (c) 1999 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ABSORPTION
BORON
CHEMICAL BONDS
DEPTH
DIAMONDS
DIFFUSION
DOPED MATERIALS
HELIUM 4 BEAMS
HYDROGEN
IRRADIATION
LAYERS
MEV RANGE
MICROSTRUCTURE
PROTON SPECTRA
QUANTITATIVE CHEMICAL ANALYSIS
RECOILS
SPATIAL DISTRIBUTION
SURFACES
THIN FILMS