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Title: Study on depth profiles of hydrogen in boron-doped diamond films by elastic recoil detection analysis

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.59183· OSTI ID:21208000
; ;  [1];  [2]
  1. Department of Modern Physics, Lanzhou University, Lanzhou, Gansu Province, 730001 (China)
  2. Center for Interfacial Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

Depth profiles of hydrogen in a set of boron-doped diamond films were studied by a convolution method to simulate the recoil proton spectra induced by {sup 4}He ions of 3 MeV. Results show that the hydrogen depth profiles in these varying-level boron-doped diamond films exhibit a similar three-layer structure: the surface absorption layer, the diffusion region, and the uniform hydrogen-containing matrix. Hydrogen concentrations at all the layers, especially in the surface layer, are found to increase significantly with the boron-doping concentration, implying that more dangling-bonds and/or CH-bonds were introduced by the boron-doping process. While the increased dangling-bonds and/or CH-bonds degrade the microstructure of the diamond films as observed by Raman Shift, the boron-doping significantly reduces the specific resistance and makes semiconducting diamond films possible. Hydrogen mobility (or hydrogen loss) in these films as a result of the {sup 4}He beam irradiation was also observed and discussed.

OSTI ID:
21208000
Journal Information:
AIP Conference Proceedings, Vol. 475, Issue 1; Conference: 15. international conference on the application of accelerators in research and industry, Denton, TX (United States), 4-7 Nov 1998; Other Information: DOI: 10.1063/1.59183; (c) 1999 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English