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Title: Plan view TEM sample preparation using the focused ion beam lift-out technique

Abstract

Localized plan view TEM samples have been prepared from silicon semiconductor wafers using the focused ion beam lift-out technique. Two different methods of sample preparation before FIB machining were found to be successful: mounting cleaved samples sandwiched together or adding silver paint and cleaving through paint and samples. The plan view technique offers site specific TEM capability from a horizontal section rather than a vertical cross section. The sections can be taken from any layer and can be angled if desired. Results have been obtained from metal layers in a semiconductor device structure. TEM micrographs of tungsten plug arrays show non-uniform barrier layer coverage and tungsten grain size across the via. Hundreds of plugs have been cut through in one sample, thereby offering statistical as well as specific structural information. Metal and polysilicon lines have been examined for grain size and uniformity in a single micrograph. Plan view samples from continuous metal layers can also be made.

Authors:
; ;  [1];  [2]; ;  [3]
  1. Lucent Technologies, 9333 S. John Young Parkway, Orlando, Florida 23819 (United States)
  2. Kirk Resources, 9333 S. John Young Parkway, Orlando, Florida 32819 (United States)
  3. University of Central Florida, Department of Mechanical, Materials, and Aerospace Engineering, 4000 Central Florida Boulevard, Orlando, Florida 32816 (United States)
Publication Date:
OSTI Identifier:
21202349
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 449; Journal Issue: 1; Conference: 1998 international conference on characterization and metrology for ULSI technology, Gaithersburg, MD (United States), 23-27 Mar 1998; Other Information: DOI: 10.1063/1.56881; (c) 1998 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GRAIN SIZE; INTEGRATED CIRCUITS; ION BEAMS; LAYERS; SAMPLE PREPARATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; SILVER; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN

Citation Formats

Stevie, F. A., Irwin, R. B., Brown, S. R., Shofner, T. L., Drown, J. L., and Giannuzzi, L. A.. Plan view TEM sample preparation using the focused ion beam lift-out technique. United States: N. p., 1998. Web. doi:10.1063/1.56881.
Stevie, F. A., Irwin, R. B., Brown, S. R., Shofner, T. L., Drown, J. L., & Giannuzzi, L. A.. Plan view TEM sample preparation using the focused ion beam lift-out technique. United States. doi:10.1063/1.56881.
Stevie, F. A., Irwin, R. B., Brown, S. R., Shofner, T. L., Drown, J. L., and Giannuzzi, L. A.. Tue . "Plan view TEM sample preparation using the focused ion beam lift-out technique". United States. doi:10.1063/1.56881.
@article{osti_21202349,
title = {Plan view TEM sample preparation using the focused ion beam lift-out technique},
author = {Stevie, F. A. and Irwin, R. B. and Brown, S. R. and Shofner, T. L. and Drown, J. L. and Giannuzzi, L. A.},
abstractNote = {Localized plan view TEM samples have been prepared from silicon semiconductor wafers using the focused ion beam lift-out technique. Two different methods of sample preparation before FIB machining were found to be successful: mounting cleaved samples sandwiched together or adding silver paint and cleaving through paint and samples. The plan view technique offers site specific TEM capability from a horizontal section rather than a vertical cross section. The sections can be taken from any layer and can be angled if desired. Results have been obtained from metal layers in a semiconductor device structure. TEM micrographs of tungsten plug arrays show non-uniform barrier layer coverage and tungsten grain size across the via. Hundreds of plugs have been cut through in one sample, thereby offering statistical as well as specific structural information. Metal and polysilicon lines have been examined for grain size and uniformity in a single micrograph. Plan view samples from continuous metal layers can also be made.},
doi = {10.1063/1.56881},
journal = {AIP Conference Proceedings},
number = 1,
volume = 449,
place = {United States},
year = {Tue Nov 24 00:00:00 EST 1998},
month = {Tue Nov 24 00:00:00 EST 1998}
}