Epitaxial growth of transparent tin oxide films on (0 0 0 1) sapphire by pulsed laser deposition
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States)
- Materials Sci. and Technol. Div., Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)
The growth of epitaxial SnO{sub 2} on (0 0 0 1) sapphire using pulsed laser deposition is examined. X-ray diffraction analysis shows that the films are highly a-axis oriented SnO{sub 2} with the rutile structure. Three distinct symmetry-equivalent in-plane epitaxial orientations were observed between the film and substrate. With increasing growth temperature, both the growth rate and surface roughness increase with columnar grain formation. Carrier concentration ranged from 10{sup 17} to 10{sup 19} cm{sup -3}, with mobility of 0.5-3 cm{sup 2}/V s. The resistivity of the films increases with increasing growth temperature, suggesting a lower density of oxygen vacancy-related defects formed during high temperature deposition.
- OSTI ID:
- 21195050
- Journal Information:
- Materials Research Bulletin, Vol. 44, Issue 1; Other Information: DOI: 10.1016/j.materresbull.2008.09.010; PII: S0025-5408(08)00311-5; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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