Photoluminescence from Er-doped Si-rich Si oxides deposited by magnetron sputtering in Ar or Ar+H{sub 2} plasmas
- Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada)
The authors have studied photoluminescence (PL) from Er-doped Si-rich Si oxide (SRSO) films deposited by magnetron sputtering of an Er+Si+SiO{sub 2} composite target in Ar or Ar+H{sub 2} ambients. When the samples were annealed in N{sub 2}, for the film grown in an Ar ambient, the PL annealing behaviors reveal that the emissions from the film are defect-related and that the Er{sup 3+} PL at 1.54 {mu}m is possibly triggered by a defect-mediated energy transfer process; while for the films grown in an Ar+H{sub 2} ambient, the emissions from the SRSO matrix are suppressed and the Er PL intensities increase significantly but differently dependent on the Ar:H{sub 2} ratios during sputtering. After annealing the samples in an Ar+5%H{sub 2} (FG) ambient, however, almost no Er PL was observed from the film grown in the Ar ambient, while the Er PL intensities of the films grown in the Ar+H{sub 2} ambient increase further compared to those annealed in N{sub 2}. Fourier transform infrared spectroscopy shows that the absorption of the samples after FG annealing is weaker than after annealing in N{sub 2}. The PL properties have also been compared to those of a sample grown by plasma enhanced chemical vapor deposition. The roles of hydrogen during sputtering and postdeposition annealing are discussed.
- OSTI ID:
- 21194983
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 1; Other Information: DOI: 10.1116/1.3043465; (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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