Effect of gas mixing ratio on etch behavior of ZrO{sub 2} thin films in Cl{sub 2}-based inductively coupled plasmas
- Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F. Engels St., 153000 Ivanovo (Russian Federation)
The analysis of the ZrO{sub 2} thin film etch mechanism in the Cl{sub 2}/Ar, Cl{sub 2}/He, and Cl{sub 2}/N{sub 2} inductively coupled plasmas was carried out. It was found that an increase in additive gas fraction at fixed gas pressure and input power results in increasing ZrO{sub 2} etch rate, which changes from 1.2 nm/min for pure Cl{sub 2} plasma up to 3.15, 2.40, and 2.31 nm/min for 80% Ar, N{sub 2}, and He, respectively. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics are noticeably influenced by the initial composition of the gas mixture. From the model-based analysis of etch kinetics, it was shown that, similarly to the case of BCl{sub 3}-based plasmas, the behavior of the ZrO{sub 2} etch rate corresponds to the ion-flux-limited etch regime.
- OSTI ID:
- 21192520
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 26, Issue 6; Other Information: DOI: 10.1116/1.2998806; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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