skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ferroelectric properties of Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3}-Pb(Zr,Ti)O{sub 3} thin films epitaxially grown on (001)MgO substrates

Abstract

Ferroelectric ternary perovskite thin films of 0.06Pb(Mn{sub 1/3},Nb{sub 2/3})O{sub 3} (PMnN)-0.42PbZrO{sub 3} (PZ)-0.52PbTiO{sub 3} (PT)[0.06PMnN-0.94PZT(45/55)] have been grown on the (001)MgO substrates by radio frequency-magnetron sputtering with quenching processing. The deposition conditions, microstructures, piezoelectric, and ferroelectric properties of the ternary perovskite thin films are described in comparison with the binary compounds of PZ-PT (PZT). The out-plane x-ray diffraction (XRD) measurements for the ternary PMnN-PZT perovskite thin films of 1 to 1-3 {mu}m in film thickness show strong single (001) orientation. The in-plane {phi}-scan XRD curve verified the ternary thin films are single crystals of perovskite structure. Their lattice parameters are almost the same as bulk values and the ternary thin films are almost stress free. The PMnN-PZT thin films show high density without columnar structure. The PZT-based ternary perovskite thin films with the small addition of PMnN, i.e., 6 mole % PMnN, exhibit a strong hard ferroelectric response, i.e., P{sub s}=60 {mu}C/cm{sup 2} and 2E{sub c}=230 kV/cm. Their effective piezoelectric constants are typically e{sub 31,eff}=-7.7 C/m{sup 2}. These values are slightly higher than those of binary perovskite PZT thin 0011fil.

Authors:
; ; ;  [1];  [2];  [3]
  1. Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093 (China)
  2. (Japan)
  3. (China)
Publication Date:
OSTI Identifier:
21192405
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 26; Journal Issue: 4; Conference: 54. international AVS symposium, Seattle, WA (United States), 14-19 Oct 2007; Other Information: DOI: 10.1116/1.2900659; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; EPITAXY; FERROELECTRIC MATERIALS; LATTICE PARAMETERS; MAGNESIUM OXIDES; MAGNETRONS; MANGANESE COMPOUNDS; MICROSTRUCTURE; MONOCRYSTALS; PERMITTIVITY; PEROVSKITE; PIEZOELECTRICITY; PZT; RADIOWAVE RADIATION; SPUTTERING; SUBSTRATES; THICKNESS; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Zhang Tao, Wasa, Kiyotaka, Kanno, Isaku, Zhang Shuyi, Department of Micro-Engineering, Kyoto University, Kyoto 606-8501, and Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093. Ferroelectric properties of Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3}-Pb(Zr,Ti)O{sub 3} thin films epitaxially grown on (001)MgO substrates. United States: N. p., 2008. Web. doi:10.1116/1.2900659.
Zhang Tao, Wasa, Kiyotaka, Kanno, Isaku, Zhang Shuyi, Department of Micro-Engineering, Kyoto University, Kyoto 606-8501, & Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093. Ferroelectric properties of Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3}-Pb(Zr,Ti)O{sub 3} thin films epitaxially grown on (001)MgO substrates. United States. doi:10.1116/1.2900659.
Zhang Tao, Wasa, Kiyotaka, Kanno, Isaku, Zhang Shuyi, Department of Micro-Engineering, Kyoto University, Kyoto 606-8501, and Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093. Tue . "Ferroelectric properties of Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3}-Pb(Zr,Ti)O{sub 3} thin films epitaxially grown on (001)MgO substrates". United States. doi:10.1116/1.2900659.
@article{osti_21192405,
title = {Ferroelectric properties of Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3}-Pb(Zr,Ti)O{sub 3} thin films epitaxially grown on (001)MgO substrates},
author = {Zhang Tao and Wasa, Kiyotaka and Kanno, Isaku and Zhang Shuyi and Department of Micro-Engineering, Kyoto University, Kyoto 606-8501 and Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093},
abstractNote = {Ferroelectric ternary perovskite thin films of 0.06Pb(Mn{sub 1/3},Nb{sub 2/3})O{sub 3} (PMnN)-0.42PbZrO{sub 3} (PZ)-0.52PbTiO{sub 3} (PT)[0.06PMnN-0.94PZT(45/55)] have been grown on the (001)MgO substrates by radio frequency-magnetron sputtering with quenching processing. The deposition conditions, microstructures, piezoelectric, and ferroelectric properties of the ternary perovskite thin films are described in comparison with the binary compounds of PZ-PT (PZT). The out-plane x-ray diffraction (XRD) measurements for the ternary PMnN-PZT perovskite thin films of 1 to 1-3 {mu}m in film thickness show strong single (001) orientation. The in-plane {phi}-scan XRD curve verified the ternary thin films are single crystals of perovskite structure. Their lattice parameters are almost the same as bulk values and the ternary thin films are almost stress free. The PMnN-PZT thin films show high density without columnar structure. The PZT-based ternary perovskite thin films with the small addition of PMnN, i.e., 6 mole % PMnN, exhibit a strong hard ferroelectric response, i.e., P{sub s}=60 {mu}C/cm{sup 2} and 2E{sub c}=230 kV/cm. Their effective piezoelectric constants are typically e{sub 31,eff}=-7.7 C/m{sup 2}. These values are slightly higher than those of binary perovskite PZT thin 0011fil.},
doi = {10.1116/1.2900659},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 4,
volume = 26,
place = {United States},
year = {Tue Jul 15 00:00:00 EDT 2008},
month = {Tue Jul 15 00:00:00 EDT 2008}
}