Self-limiting deposition of aluminum oxide thin films by pulsed plasma-enhanced chemical vapor deposition
Abstract
Self-limiting deposition of aluminum oxide (Al{sub 2}O{sub 3}) thin films was accomplished by pulsed plasma-enhanced chemical vapor deposition using a continuous delivery of trimethyl aluminum (TMA) and O{sub 2}. Film characterization included spectroscopic ellipsometry and Fourier transform infrared (FTIR) spectroscopy. Deposition rates scaled with TMA exposure and could be controlled over a large range of 1-20 A/pulse. For fixed conditions, digital control over film thickness is demonstrated. Deposition rates initially decreased with substrate temperature before becoming constant for T{sub s}>100 deg. C. Higher growth rates at low temperature are attributed to the thermal reaction between H{sub 2}O, produced during the plasma on step, with TMA during the plasma off step. Gas-phase analysis confirms the coexistence of these species, and their degree of overlap is a strong function of the chamber wall temperature. With both the substrate and chamber wall temperature elevated, impurities related to carbon and hydroxyl groups are attenuated below the detection limit of FTIR.
- Authors:
-
- Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States)
- Publication Date:
- OSTI Identifier:
- 21192373
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
- Additional Journal Information:
- Journal Volume: 26; Journal Issue: 4; Conference: 54. international AVS symposium, Seattle, WA (United States), 14-19 Oct 2007; Other Information: DOI: 10.1116/1.2891258; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CARBON; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FOURIER TRANSFORMATION; HYDROXIDES; INFRARED SPECTRA; PHASE STUDIES; PLASMA; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K; THICKNESS; THIN FILMS
Citation Formats
Szymanski, Scott F, Rowlette, Pieter, and Wolden, Colin A. Self-limiting deposition of aluminum oxide thin films by pulsed plasma-enhanced chemical vapor deposition. United States: N. p., 2008.
Web. doi:10.1116/1.2891258.
Szymanski, Scott F, Rowlette, Pieter, & Wolden, Colin A. Self-limiting deposition of aluminum oxide thin films by pulsed plasma-enhanced chemical vapor deposition. United States. https://doi.org/10.1116/1.2891258
Szymanski, Scott F, Rowlette, Pieter, and Wolden, Colin A. 2008.
"Self-limiting deposition of aluminum oxide thin films by pulsed plasma-enhanced chemical vapor deposition". United States. https://doi.org/10.1116/1.2891258.
@article{osti_21192373,
title = {Self-limiting deposition of aluminum oxide thin films by pulsed plasma-enhanced chemical vapor deposition},
author = {Szymanski, Scott F and Rowlette, Pieter and Wolden, Colin A},
abstractNote = {Self-limiting deposition of aluminum oxide (Al{sub 2}O{sub 3}) thin films was accomplished by pulsed plasma-enhanced chemical vapor deposition using a continuous delivery of trimethyl aluminum (TMA) and O{sub 2}. Film characterization included spectroscopic ellipsometry and Fourier transform infrared (FTIR) spectroscopy. Deposition rates scaled with TMA exposure and could be controlled over a large range of 1-20 A/pulse. For fixed conditions, digital control over film thickness is demonstrated. Deposition rates initially decreased with substrate temperature before becoming constant for T{sub s}>100 deg. C. Higher growth rates at low temperature are attributed to the thermal reaction between H{sub 2}O, produced during the plasma on step, with TMA during the plasma off step. Gas-phase analysis confirms the coexistence of these species, and their degree of overlap is a strong function of the chamber wall temperature. With both the substrate and chamber wall temperature elevated, impurities related to carbon and hydroxyl groups are attenuated below the detection limit of FTIR.},
doi = {10.1116/1.2891258},
url = {https://www.osti.gov/biblio/21192373},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
issn = {1553-1813},
number = 4,
volume = 26,
place = {United States},
year = {Tue Jul 15 00:00:00 EDT 2008},
month = {Tue Jul 15 00:00:00 EDT 2008}
}