Effect of CeO{sub 2} buffer layer on the microstructure and magnetic properties of yttrium iron garnet film on Si substrate
- State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 (China)
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware, 19716 (United States)
Yttrium iron garnet films were grown by radio frequency magnetron sputtering on Si(111) substrate with and without CeO{sub 2} buffer layer, and influence of CeO{sub 2} buffer on the microstructure and magnetic behaviors of the films were investigated. As compared with the film without buffer, a larger saturation magnetizaton (M{sub s}), lower coercive force (H{sub c}), and higher remnant magnetization (M{sub r}) were obtained due to the introduction of CeO{sub 2} layer. The higher M{sub s} results from the denser structure and the smaller content of Fe{sup 2+} ions. The lower H{sub c} and higher M{sub r} can be explained by the small surface roughness and crystal grains size. The film on CeO{sub 2} buffer layer possess fine microstructure and its surface roughness is smaller than the unbuffered films, which provides an increased exchange between the crystal grains and an enhanced spontaneous magnetization effect, leading to the higher remnant magnetization.
- OSTI ID:
- 21190134
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 7; Conference: 53. annual conference on magnetism and magnetic materials, Austin, TX (United States), 10-14 Nov 2008; Other Information: DOI: 10.1063/1.3056404; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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