Effect of residual stress on the ferroelectric property of (Pb{sub 0.90}La{sub 0.10})Ti{sub 0.975}O{sub 3} thin films
- Department of Materials Science, Sichuan University, Chengdu 610064 (China)
Highly (001)-, (100)-, (101)-, and (110)-oriented (Pb{sub 0.90}La{sub 0.10})Ti{sub 0.975}O{sub 3} (PLT) thin films were deposited on the LaNiO{sub 3}(001)/Pt(111)/Ti/SiO{sub 2}/Si(100), LaNiO{sub 3}/SiO{sub 2}/Si(100), PbTiO{sub 3}/Pt(111)/Ti/SiO{sub 2}/Si(100), and LaNiO{sub 3}(110)/Pt(111)/Ti/SiO{sub 2}/Si(100) substrates by rf magnetron sputtering. The orientation dependence of ferroelectric properties of the PLT films was investigated. The result shows that the (001)-oriented PLT thin films exhibit enhanced ferroelectric properties (2P{sub r}=61.1 {mu}C/cm{sup 2} and 2E{sub c}=179 kV/cm). The residual stress of the PLT thin films with different orientations was measured by x-ray diffraction (sin{sup 2} {psi} method) for illuminating the related physical mechanisms. The result shows that the enhanced ferroelectric properties of (001)-oriented PLT thin films should be attributed to low residual stress.
- OSTI ID:
- 21190067
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 5; Other Information: DOI: 10.1063/1.3079510; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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