Effect of pulsed laser irradiation on the structure of GeTe films deposited by metal organic chemical vapor deposition: A Raman spectroscopy study

Journal Article · Sun Feb 01 00:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3075906· OSTI ID:21186011

Salicio, O; Wiemer, C; Fanciulli, M ^[1]; Gawelda, W; Siegel, J; Afonso, C N ^[2]; Plausinaitiene, V; Abrutis, A ^[3]

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1. CNR-INFM MDM Laboratory, via C. Olivetti 2, 20041 Agrate Brianza (Italy)
2. Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, E-28006 Madrid (Spain)
3. Department of General and Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Naugarduko 24, LT-2006 VU (Lithuania)

Phase changes between amorphous and crystallized states were induced by laser irradiation with nanosecond pulses in Ge{sub x}Te{sub y} films grown by metal organic chemical vapor deposition. The different phases were obtained by adjusting the pulse energy and could be distinguished by their different optical reflectivities. The corresponding structural changes were studied by Raman spectroscopy, showing marked differences for the two phases. A clear correlation is found between optical reflectivity levels, crystallographic state and the evolution of Ge-Ge, Te-Te, and Ge-Te Raman bands.

• OSTI ID: 21186011
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 3; Other Information: DOI: 10.1063/1.3075906; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTALLOGRAPHY
GERMANIUM TELLURIDES
LASER RADIATION
LASERS
ORGANOMETALLIC COMPOUNDS
PHASE CHANGE MATERIALS
PULSES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
REFLECTIVITY
SEMICONDUCTOR MATERIALS
THIN FILMS