Annealing of ion irradiated high T{sub C} Josephson junctions studied by numerical simulations

Journal Article · Thu Jan 15 00:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3068178· OSTI ID:21185985

Sirena, M; Matzen, S; Bergeal, N; Lesueur, J ^[1]; Faini, G ^[2]; Bernard, R; Briatico, J; Crete, D G ^[3]

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1. LPEM-CNRS, Physique Quantique, ESPCI, 10 Rue Vauquelin, 75231 Paris (France)
2. LPN-CNRS, Route de Nozay, 91460 Marcoussis (France)
3. UMR-CNRS/THALES, Route D128, 91767 Palaiseau (France)

Recently, annealing of ion irradiated high T{sub c} Josephson iunctions (JJs) has been studied experimentally in the perspective of improving their reproducibility. Here we present numerical simulations based on random walk and Monte Carlo calculations of the evolution of JJ characteristics such as the transition temperature T{sub c}{sup '} and its spread {delta}T{sub c}{sup '}, and compare them with experimental results on junctions irradiated with 100 and 150 keV oxygen ions, and annealed at low temperatures (below 80 deg. C). We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the T{sub c}{sup '} and the homogeneity of a JJ array, analyzing the evolution of the defects density mean value and its distribution width. The annealing first increases the spread in T{sub c}{sup '} for short annealing times due to the stochastic nature of the process, but then tends to reduce it for longer times, which is interesting for technological applications.

• OSTI ID: 21185985
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 2; Other Information: DOI: 10.1063/1.3068178; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTALS
GRAPH THEORY
HIGH-TC SUPERCONDUCTORS
INTERSTITIALS
ION BEAMS
IRRADIATION
JOSEPHSON EFFECT
JOSEPHSON JUNCTIONS
KEV RANGE 100-1000
MONTE CARLO METHOD
NUMERICAL ANALYSIS
OXYGEN IONS
RANDOMNESS
SIMULATION
STOCHASTIC PROCESSES
TEMPERATURE RANGE 0273-0400 K
TRANSITION TEMPERATURE
VACANCIES