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Title: Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

Abstract

Wurtzite Zn{sub 1-x}Mg{sub x}O thin films with Mg contents between x=0 and x=0.37 were grown on c-plane sapphire substrates by plasma assisted molecular beam epitaxy using a MgO/ZnMgO buffer layer. The a-lattice parameter is independent from the Mg concentration, whereas the c-lattice parameter decreases from 5.20 A for x=0 to 5.17 A for x=0.37, indicating pseudomorphic growth. The near band edge photoluminescence shows a blueshift with increasing Mg concentration to an emission energy of 4.11 eV for x=0.37. Simultaneously, the energetic position of the deep defect luminescence shows a linear shift from 2.2 to 2.8 eV. Low temperature transmission measurements reveal strong excitonic features for the investigated composition range and alloy broadening effects for higher Mg contents. The Stokes shift as well as the Urbach energy is increased to values of up to 125 and 54 meV for x=0.37, respectively, indicating exciton localization due to alloy fluctuations.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)
  2. I. Physikalisches Institut, Justus-Liebig-Universitaet, 35392 Giessen (Germany)
Publication Date:
OSTI Identifier:
21185981
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 105; Journal Issue: 2; Other Information: DOI: 10.1063/1.3065535; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; EV RANGE 01-10; EXCITONS; LATTICE PARAMETERS; LAYERS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA; SAPPHIRE; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; SUBSTRATES; THIN FILMS; ZINC COMPOUNDS

Citation Formats

Wassner, Thomas A., Laumer, Bernhard, Maier, Stefan, Stutzmann, Martin, Laufer, Andreas, Meyer, Bruno K., and Eickhoff, Martin. Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy. United States: N. p., 2009. Web. doi:10.1063/1.3065535.
Wassner, Thomas A., Laumer, Bernhard, Maier, Stefan, Stutzmann, Martin, Laufer, Andreas, Meyer, Bruno K., & Eickhoff, Martin. Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy. United States. doi:10.1063/1.3065535.
Wassner, Thomas A., Laumer, Bernhard, Maier, Stefan, Stutzmann, Martin, Laufer, Andreas, Meyer, Bruno K., and Eickhoff, Martin. Thu . "Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy". United States. doi:10.1063/1.3065535.
@article{osti_21185981,
title = {Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy},
author = {Wassner, Thomas A. and Laumer, Bernhard and Maier, Stefan and Stutzmann, Martin and Laufer, Andreas and Meyer, Bruno K. and Eickhoff, Martin},
abstractNote = {Wurtzite Zn{sub 1-x}Mg{sub x}O thin films with Mg contents between x=0 and x=0.37 were grown on c-plane sapphire substrates by plasma assisted molecular beam epitaxy using a MgO/ZnMgO buffer layer. The a-lattice parameter is independent from the Mg concentration, whereas the c-lattice parameter decreases from 5.20 A for x=0 to 5.17 A for x=0.37, indicating pseudomorphic growth. The near band edge photoluminescence shows a blueshift with increasing Mg concentration to an emission energy of 4.11 eV for x=0.37. Simultaneously, the energetic position of the deep defect luminescence shows a linear shift from 2.2 to 2.8 eV. Low temperature transmission measurements reveal strong excitonic features for the investigated composition range and alloy broadening effects for higher Mg contents. The Stokes shift as well as the Urbach energy is increased to values of up to 125 and 54 meV for x=0.37, respectively, indicating exciton localization due to alloy fluctuations.},
doi = {10.1063/1.3065535},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 105,
place = {United States},
year = {2009},
month = {1}
}