Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO{sub 2} film technique

Journal Article · Thu Jan 01 00:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3055211· OSTI ID:21185963

Nakamura, Yoshiaki; Sugimoto, Tomohiro; Ichikawa, Masakazu ^[1]

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1. Department of Applied Physics, Quantum-Phase Electronics Center, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

We developed a technique for forming epitaxial GaSb quantum dots on Si substrates using ultrathin SiO{sub 2} films that contain epitaxial Ge nuclei. Unlike Volmer-Weber-type GaSb quantum dots on Si, the dot density was higher (10{sup 9}-10{sup 12} cm{sup -2}) and the dot size was controlled in the range of approximately 10-100 nm. The nucleation of quantum dots was initiated by trapping Ga atoms on the Ge nuclei. Photoluminescence spectroscopy measurement at 5 K revealed the quantum-confinement effect in GaSb dots causing the photoluminescence peak to be continuously blueshifted from 0.76 eV by {approx}30 meV when the base length of the dots decreases from 100 to 17 nm.

• OSTI ID: 21185963
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 1; Other Information: DOI: 10.1063/1.3055211; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ANTIMONIDES
MOLECULAR BEAM EPITAXY
NUCLEATION
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPECTROSCOPY
SUBSTRATES
THIN FILMS
TRAPPING